Electromechanical fields in PN junctions with continuously graded doping in piezoelectric semiconductor rods

被引：9
|
作者：
Yang, Guangying [1 ]
Du, Jianke [1 ]
Wang, Ji [1 ]
Yang, Jiashi [2 ]
机构：
[1] Ningbo Univ, Sch Mech Engn & Mech, Smart Mat & Adv Struct Lab, Ningbo 315211, Zhejiang, Peoples R China
[2] Univ Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA
来源：
ARCHIVE OF APPLIED MECHANICS | 2022年 / 92卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Piezoelectric; Semiconductor; PN junction; PIEZO-PHOTOTRONICS; ANTIPLANE CRACK; PIEZOTRONICS; NANOWIRE; NANOGENERATOR; FUNDAMENTALS; PROPERTY; FIBER;
D O I：
10.1007/s00419-021-02059-0
中图分类号：
O3 [力学];
学科分类号：
08 ; 0801 ;
摘要：
We study PN junctions in a piezoelectric semiconductor rod with continuously graded doping. The macroscopic theory of piezoelectric semiconductor is used. The doping profile is describes by power series in a general manner. The resulting differential equation is also solved by power series. Electromechanical fields produced by doping described by the error function are calculated numerically as an example. Numerical results show the diffusion of carriers and the formation of PN junctions. The effective polarization charge, the built-in electric field and potential, and the strain and mechanical displacement are also calculated.
引用
收藏
页码：325 / 333
页数：9
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