Tailoring the Emission Wavelength of Color Centers in Hexagonal Boron Nitride for Quantum Applications

被引:18
|
作者
Cholsuk, Chanaprom [1 ]
Suwanna, Sujin [2 ]
Vogl, Tobias [1 ,3 ,4 ]
机构
[1] Friedrich Schiller Univ Jena, Abbe Ctr Photon, Inst Appl Phys, D-07745 Jena, Germany
[2] Mahidol Univ, Dept Phys, Opt & Quantum Phys Lab, Bangkok 10400, Thailand
[3] Fraunhofer Inst Appl Opt & Precis Engn IOF, D-07745 Jena, Germany
[4] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
关键词
single photons; defects; quantum emitters; density functional theory; strain tuning; charge states; SINGLE-PHOTON SOURCES; EMITTERS; NITROGEN;
D O I
10.3390/nano12142427
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Optical quantum technologies promise to revolutionize today's information processing and sensors. Crucial to many quantum applications are efficient sources of pure single photons. For a quantum emitter to be used in such application, or for different quantum systems to be coupled to each other, the optical emission wavelength of the quantum emitter needs to be tailored. Here, we use density functional theory to calculate and manipulate the transition energy of fluorescent defects in the two-dimensional material hexagonal boron nitride. Our calculations feature the HSE06 functional which allows us to accurately predict the electronic band structures of 267 different defects. Moreover, using strain-tuning we can tailor the optical transition energy of suitable quantum emitters to match precisely that of quantum technology applications. We therefore not only provide a guide to make emitters for a specific application, but also have a promising pathway of tailoring quantum emitters that can couple to other solid-state qubit systems such as color centers in diamond.
引用
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页数:13
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