Tunnel current and I-V characteristics of vacuum extremely-high-frequency microelectronic structures

被引：1
|
作者：
Bushuev, N. A. [1 ]
机构：
[1] OAO NPP Almaz, Saratov 410033, Russia
来源：
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 2015年 / 60卷 / 02期
关键词：
ELECTRON-EMISSION; MODEL;
D O I：
10.1134/S1064226915020023
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Tunneling (cold emission) through potential barriers of a complex shape in vacuum microelectronic diode and triode structures, including those with several electrodes, is theoretically investigated and I-V characteristics of these structures are obtained.
引用
收藏
页码：193 / 203
页数：11
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