Closed-form physics-based models for threshold voltage and subthreshold slope in FinFETs including 3D effects

被引：0
|
作者：
Kloes, A. [1 ]
Weidemann, M. [1 ]
Goebel, D. [1 ]
Bosworth, B. T. [2 ]
机构：
[1] Univ Appl Sci Giessen Friedberg, Dept Elect Engn & Informat Technol, Giessen, Germany
[2] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
来源：
2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 | 2007年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：437 / +
页数：2
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