Closed-form physics-based models for threshold voltage and subthreshold slope in FinFETs including 3D effects

被引：0
|
作者：
Kloes, A. [1 ]
Weidemann, M. [1 ]
Goebel, D. [1 ]
Bosworth, B. T. [2 ]
机构：
[1] Univ Appl Sci Giessen Friedberg, Dept Elect Engn & Informat Technol, Giessen, Germany
[2] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
来源：
2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：437 / +
页数：2
相关论文
共 50 条
  • [1] Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing
    Beckers, Arnout
    Michl, Jakob
    Grill, Alexander
    Kaczer, Ben
    Bardon, Marie Garcia
    Parvais, Bertrand
    Govoreanu, Bogdan
    De Greve, Kristiaan
    Hiblot, Gaspard
    Hellings, Geert
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2023, 22 : 590 - 596
  • [2] Three-Dimensional Closed-Form Model for Potential Barrier in Undoped FinFETs Resulting in Analytical Equations for VT and Subthreshold Slope
    Kloes, Alexander
    Weidemann, Michaela
    Goebel, Daniel
    Bosworth, Bryan T.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (12) : 3467 - 3475
  • [3] Physics-based closed-form inductance expression for compact modeling of integrated spiral inductors
    Jenei, S
    Nauwelaers, BKJC
    Decoutere, S
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2002, 37 (01) : 77 - 80
  • [4] Modelling of threshold voltage and subthreshold slope of strained-Si MOSFETs including quantum effects
    Mukhopadhyay, Bratati
    Biswas, Abhijit
    Basu, P. K.
    Eneman, G.
    Verheyen, P.
    Simoen, E.
    Claeys, C.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (09)
  • [5] A Closed-form Estimate of 3D ICP Covariance
    Manoj, Prakhya Sai
    Liu Bingbing
    Rui, Yan
    Lin, Weisi
    2015 14th IAPR International Conference on Machine Vision Applications (MVA), 2015, : 526 - 529
  • [6] Use of physics-based models in the determination of POD for 3D defects
    Thompson, RB
    REVIEW OF PROGRESS IN QUANTITATIVE NONDESTRUCTIVE EVALUATION, VOLS 24A AND 24B, 2005, 760 : 1917 - 1924
  • [7] 2D physics-based closed-form modeling of dopant-segregated Schottky barrier UTB MOSFETs
    Schwarz, Mike
    Kloes, Alexander
    SOLID-STATE ELECTRONICS, 2014, 99 : 65 - 77
  • [8] 3D analytical modeling of surface potential, threshold voltage, and subthreshold swing in dual-material-gate (DMG) SOI FinFETs
    Saha, Rajesh
    Baishya, Srimanta
    Bhowmick, Brinda
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2018, 17 (01) : 153 - 162
  • [9] 3D analytical modeling of surface potential, threshold voltage, and subthreshold swing in dual-material-gate (DMG) SOI FinFETs
    Rajesh Saha
    Srimanta Baishya
    Brinda Bhowmick
    Journal of Computational Electronics, 2018, 17 : 153 - 162
  • [10] A 3D PHYSICS-BASED HYDRAULIC EXCAVATOR SIMULATOR
    Gonzalez, Manuel
    Luaces, Alberto
    Dopico, Daniel
    Cuadrado, Javier
    WINVR2009: PROCEEDINGS OF THE ASME/AFM WORLD CONFERENCE ON INNOVATIVE VIRTUAL REALITY - 2009, 2009, : 75 - 80
12345