Structural characteristics of SiGe/Si materials investigated by Raman spectroscopy

被引：3
|
作者：
Chen, CC [1 ]
Yu, BH [1 ]
Liu, JF [1 ]
Dai, QR [1 ]
机构：
[1] XinYang Normal Univ, Coll Phys & Elect Engn, XinYang 464000, Henan Province, Peoples R China
来源：
METALS AND MATERIALS INTERNATIONAL | 2005年 / 11卷 / 04期
关键词：
SiGe; UHVCVD; Raman;
D O I：
10.1007/BF03027329
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, we employ a simple, efficient, and nondestructive Raman scattering analysis method to study the structural features of Si1-xGex/Si film. Markedly, the method can simultaneously determine the Ge fractional composition x, the strain of SiGe films as well as its relaxation degree, the thickness of a SiGe epilayer and the crystallinity of SiGe film. At the same time, Rutherford backscattering spectroscopy/Channeling are also used to characterize SiGe films with the aim of corroborating the validity of the Raman analysis with respect to the Ge content, and the thickness and crystal quality of the SiGe film. It is demonstrated that Raman spectra show significant promise for obtaining a considerable variety of parameters of SiGe film in a nondestructive, highly production-efficient, and cost-effective manner.
引用
收藏
页码：279 / 283
页数：5
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