Determining Si Composition in SiGe Alloys with < 1% Si concentrations using Raman Spectroscopy

被引：0
|
作者：
De Wolf, I [1 ,2 ]
Simons, V [1 ]
Srinivasan, S. A. [1 ]
Verheyen, P. [1 ]
Loo, R. [1 ]
机构：
[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
[2] Katholieke Univ Leuven, Dept Mat Engn, Leuven, Belgium
来源：
SIGE, GE, AND RELATED COMPOUNDS: MATERIALS, PROCESSING, AND DEVICES 8 | 2018年 / 86卷 / 07期
关键词：
D O I：
10.1149/08607.0397ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
This paper proposes a methodology based on Raman spectroscopy to determine the Si concentration in SiGe films with less than 1.2% Si. The methodology is validated on SiGe films with Si concentrations varying between 0.10% and 1.83% using SIMS results. It is next applied in a study of diffusion of Si in annealed GeSi films.
引用
收藏
页码：397 / 407
页数：11
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