Transition from semi-classical to quantum transport in quasi-ballistic wires

被引:0
|
作者
Ochiai, Y
Yamamoto, K
Ishibashi, K
Bird, JP
Aoyagi, Y
Sugano, T
Tankei, K
Nagaoka, Y
机构
[1] RIKEN,NANO ELECT,WAKO,SAITAMA 35101,JAPAN
[2] MATSUSAKA UNIV,PHYS LAB,MATSUSAKA,MIE 515,JAPAN
[3] KYOTO UNIV,YUKAWA INST THEORET PHYS,SAKYO KU,KYOTO 60601,JAPAN
关键词
GaA5/AIGaAs heterojunction; split-gated quantum wires; conductance quantization; quasi-ballistic conduction; transmission probability;
D O I
10.1143/JJAP.35.1358
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have found evidence of a transition from the semi-classical to quantum transport in quasi-ballistic narrow aires constructed in 2DEG system of a GaAs/AlGaAs heterojunction. By increasing the ratio of the mean free path to the wire length while keeping the wire width constant, we find a clear offset between the semi-classical and the quantum behaviors in the two-terminal measurement of the wire resisitance. We can explain such an offset by taking into account the transmission probability of electron waves propagating in the wire.
引用
收藏
页码:1358 / 1360
页数:3
相关论文
共 50 条
  • [41] Quasi-Ballistic Transport in Nanowire Field-Effect Transistors
    Gnani, Elena
    Gnudi, Antonio
    Reggiani, Susanna
    Baccarani, Giorgio
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (11) : 2918 - 2930
  • [42] Geometrical quasi-ballistic effects on thermal transport in nanostructured devices
    Sami Alajlouni
    Albert Beardo
    Lluc Sendra
    Amirkoushyar Ziabari
    Javier Bafaluy
    Juan Camacho
    Yi Xuan
    F. Xavier Alvarez
    Ali Shakouri
    Nano Research, 2021, 14 : 945 - 952
  • [43] Quasi-Ballistic Transport in Nanowire Field-Effect Transistors
    Baccarani, Giorgio
    Gnani, Elena
    Gnudi, Antonio
    Reggiani, Susanna
    SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2008, : 5 - +
  • [44] Microscopic origin of heat vorticity in quasi-ballistic phonon transport
    Tur-Prats, Jordi
    Gutierrez-Perez, Marc
    Bafaluy, Javier
    Camacho, Juan
    Alvarez, F. Xavier
    Beardo, Albert
    INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 2024, 226
  • [45] INVESTIGATION OF PLASMON-INDUCED LOSSES IN QUASI-BALLISTIC TRANSPORT
    LUGLI, P
    FERRY, DK
    IEEE ELECTRON DEVICE LETTERS, 1985, 6 (01) : 25 - 27
  • [46] The impact of defect scattering on the quasi-ballistic transport of nanoscale conductors
    Esqueda, I. S.
    Cress, C. D.
    Cao, Y.
    Che, Y.
    Fritze, M.
    Zhou, C.
    JOURNAL OF APPLIED PHYSICS, 2015, 117 (08)
  • [47] Quasi-ballistic electron transport through silicon nano crystals
    Mori, Nobuya
    Minari, Hideki
    Uno, Shigeyasu
    Mizuta, Hiroshi
    Koshida, Nobuyuki
    16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16), 2009, 193
  • [48] Semi-classical Monte Carlo study of the impact of contact geometry and transmissivity on quasi-ballistic nanoscale Si and In0.53Ga0.47As n-channel FinFETs
    Bhatti, Aqyan A.
    Crum, Dax M.
    Valsaraj, Amith
    Register, Leonard F.
    Banerjee, Sanjay K.
    JOURNAL OF APPLIED PHYSICS, 2019, 126 (10)
  • [49] Quasi-ballistic and superdiffusive transport for impulsive solar particle events
    Trotta, E. M.
    Zimbardo, G.
    ASTRONOMY & ASTROPHYSICS, 2011, 530
  • [50] Geometrical quasi-ballistic effects on thermal transport in nanostructured devices
    Alajlouni, Sami
    Beardo, Albert
    Sendra, Lluc
    Ziabari, Amirkoushyar
    Bafaluy, Javier
    Camacho, Juan
    Xuan, Yi
    Alvarez, F. Xavier
    Shakouri, Ali
    NANO RESEARCH, 2021, 14 (04) : 945 - 952