Non-quasi-static physics-based circuit model of fully-depleted double-gate SOI MOSFET

被引：4

作者：

Jankovic, N ^{[1
]}

Pesic, T ^{[1
]}

机构：

[1] Fac Elect Engn, Microelect Dept, Nish 18000, Serbia Monteneg

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 07期

关键词：

D O I：

10.1016/j.sse.2005.03.024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we describe a compact non-quasi-static (NQS) model of fully-depleted (FD) double-gate (DG) SOI MOSFETs developed on the modified NQS model for bulk single-gate devices. Based on the comparison with the 2-D numerical device simulations, it is shown that new NQS model can accurately predict dc, ac and transient characteristics of FD DG MOSFETs in all operational regions and for small-signal frequencies up to a few cut-off frequencies. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1086 / 1089

页数：4

共 50 条

[1] An analytical (classical) subthreshold behavior model for symmetrical fully-depleted SOI double-gate MOSFET's
Chiang, TK
[J]. JOURNAL OF THE CHINESE INSTITUTE OF ENGINEERS, 2004, 27 (02) : 223 - 230
[2] Threshold voltage modeling of deep-submicron double-gate fully-depleted SOI MOSFET
Zhang Zhengfan
Fang Jian
Li Ruzhang
Zhang Zhengyuan
Li Zhaoji
[J]. ASICON 2007: 2007 7TH INTERNATIONAL CONFERENCE ON ASIC, VOLS 1 AND 2, PROCEEDINGS, 2007, : 1154 - 1157
[3] A Non-Quasi-Static SOI MOSFET Model
Burke, Darren R.
Brazil, Thomas J.
[J]. 2008 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2008, : 290 - 293
[4] Non-Quasi-Static modeling and methodology in fully depleted SOI MOSFET for L-UTSOI model
Martinie, S.
Rozeau, O.
Park, HyoEun
Park, Sungjoon
Scheer, P.
El Ghouli, S.
Juge, A.
Lee, H.
Poiroux, T.
[J]. SOLID-STATE ELECTRONICS, 2023, 199
[5] Non-quasi-static SOI MOSFET model dedicated for analog circuit design
Robilliart, E
Dubois, E
[J]. 1996 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 1996, : 13 - 14
[6] A physics-based short-channel SOI MOSFET model for fully-depleted single drain and LDD devices
Chyau, CG
Jang, SL
Sheu, CJ
[J]. SOLID-STATE ELECTRONICS, 2000, 44 (03) : 487 - 499
[7] Threshold voltage model of deep submicrometer double-gate fully-depleted SOI MOS devices
Zhengfan, Zhang
Jian, Fang
Ruzhang, Li
Zhengyuan, Zhang
Zhaoji, Li
[J]. IEEE 2007 INTERNATIONAL SYMPOSIUM ON MICROWAVE, ANTENNA, PROPAGATION AND EMC TECHNOLOGIES FOR WIRELESS COMMUNICATIONS, VOLS I AND II, 2007, : 1450 - +
[8] A physics-based electron gate current model for fully depleted SOI MOSFETs
Sheu, CJ
Jang, SL
[J]. SOLID-STATE ELECTRONICS, 2000, 44 (10) : 1799 - 1806
[9] Characteristics of double-gate, dual-strained-channel, fully-depleted SOI MOSFETs
Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China
[J]. Pan Tao Ti Hsueh Pao, 2008, 2 (338-343): : 338 - 343
[10] A new scaling theory for fully-depleted SOI double-gate MOSFET's: including effective conducting path effect (ECPE)
Chiang, TK
[J]. SOLID-STATE ELECTRONICS, 2005, 49 (03) : 317 - 322

← 1 2 3 4 5 →