Temperature vs. impedance dependencies of neutron-irradiated nanocrystalline silicon carbide (3C-SiC)

被引：34
|
作者：
Huseynov, Elchin [1 ,3 ]
Jazbec, Anze [2 ]
Snoj, Luka [2 ]
机构：
[1] Azerbaijan Natl Acad Sci, Inst Radiat Problems, B Vahabzade 9, AZ-1143 Baku, Azerbaijan
[2] Jozef Stefan Inst, Reactor Phys Dept, Jamova 39, Ljubljana 1000, Slovenia
[3] Natl Ctr Nucl Res, Dept Nanotechnol & Radiat Mat Sci, Inshaatchilar Pr 4, AZ-1073 Baku, Azerbaijan
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2019年 / 125卷 / 01期
关键词：
PARTICLE RESPONSE; FREQUENCY; CONDUCTIVITY; SPECTROSCOPY; PARAMETERS; POLYTYPES; OXIDE;
D O I：
10.1007/s00339-018-2294-x
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
At the present work, impedance spectroscopy of nanocrystalline silicon carbide (3C-SiC) has been investigated as a function of temperature. Nanocrystalline 3C-SiC particles irradiated by neutrons (2x10(13) n cm(-2)s(-1)) up to 20h. Impedance of neutron-irradiated nanocrystalline 3C-SiC has been studied at the temperature range of 100-400K. Impedance spectra of the nanocrystal have been comparatively studied before and after neutron irradiation. The natures of conductivity and the metalsemiconductor transition temperature (T-MS = 250K, 325K, and 370K at the various frequencies) have been defined from the complex impedance spectroscopy. Polarization of nanocrystalline 3C-SiC increased corresponding to neutron irradiation duration. The mechanism of all effects observed in the experiments has been given in the work.
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页数：8
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