Temperature vs. impedance dependencies of neutron-irradiated nanocrystalline silicon carbide (3C-SiC)

被引：34

作者：

Huseynov, Elchin ^{[1
,3
]}

Jazbec, Anze ^{[2
]}

Snoj, Luka ^{[2
]}

机构：

[1] Azerbaijan Natl Acad Sci, Inst Radiat Problems, B Vahabzade 9, AZ-1143 Baku, Azerbaijan

[2] Jozef Stefan Inst, Reactor Phys Dept, Jamova 39, Ljubljana 1000, Slovenia

[3] Natl Ctr Nucl Res, Dept Nanotechnol & Radiat Mat Sci, Inshaatchilar Pr 4, AZ-1073 Baku, Azerbaijan

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2019年 / 125卷 / 01期

关键词：

PARTICLE RESPONSE; FREQUENCY; CONDUCTIVITY; SPECTROSCOPY; PARAMETERS; POLYTYPES; OXIDE;

D O I：

10.1007/s00339-018-2294-x

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

At the present work, impedance spectroscopy of nanocrystalline silicon carbide (3C-SiC) has been investigated as a function of temperature. Nanocrystalline 3C-SiC particles irradiated by neutrons (2x10(13) n cm(-2)s(-1)) up to 20h. Impedance of neutron-irradiated nanocrystalline 3C-SiC has been studied at the temperature range of 100-400K. Impedance spectra of the nanocrystal have been comparatively studied before and after neutron irradiation. The natures of conductivity and the metalsemiconductor transition temperature (T-MS = 250K, 325K, and 370K at the various frequencies) have been defined from the complex impedance spectroscopy. Polarization of nanocrystalline 3C-SiC increased corresponding to neutron irradiation duration. The mechanism of all effects observed in the experiments has been given in the work.

引用

页数：8

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