Optical Properties of InGaN/GaN Multiple Quantum Well Structures Grown on GaN and Sapphire Substrates

被引：5

作者：

Jary, Vitezslav ^{[1
]}

Hospodkova, Alice ^{[1
]}

Hubacek, Tomas ^{[1
]}

Hajek, Frantisek ^{[1
]}

Blazek, Karel ^{[2
]}

Nikl, Martin ^{[1
]}

机构：

[1] Acad Sci Czech Republ, Inst Phys, Prague 16253, Czech Republic

[2] CRYTUR Spol Sro, Turnov 51101, Czech Republic

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2020年 / 67卷 / 06期

关键词：

Gallium nitride; Substrates; Quantum well devices; Photoluminescence; Photonic band gap; Fluctuations; Nanotechnology; photoluminescence (PL); scintillation detectors;

D O I：

10.1109/TNS.2020.2985666

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A set of samples based on InGaN/GaN multiple quantum well (QW) structures with an extremely thick active region and high QW numbers was prepared on different substrates by metal organic vapor phase epitaxy. Their morphology was studied by SEM images, and their optical properties, including photoluminescence (PL) excitation, PL emission spectra, and PL decay curves, were measured by means of time-resolved luminescence spectroscopy. The obtained spectral features were tentatively explained by using the band scheme, which is commonly used for the description of InGaN/GaN multiple QW (MQW) structures. The application potential in the field of nanoscintillators used for fast timing of studied structures is discussed as well.

引用

页码：974 / 977

页数：4

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