Demonstration of nonvolatile multilevel memory in ambipolar carbon nanotube thin-film transistors

被引：2
|
作者：
Li, Guanhong [1 ,2 ,3 ]
Li, Qunqing [1 ,2 ,3 ]
Jin, Yuanhao [1 ,2 ,3 ]
Qian, Qingkai [1 ,2 ,3 ]
Zhao, Yudan [1 ,2 ,3 ]
Xiao, Xiaoyang [1 ,2 ,3 ]
Wang, Jiaping [1 ,2 ,3 ]
Jiang, Kaili [1 ,2 ,3 ]
Fan, Shoushan [1 ,2 ,3 ]
机构：
[1] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China
[3] Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China
来源：
APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 06期
基金：
中国国家自然科学基金;
关键词：
FIELD-EFFECT TRANSISTORS; COMPLEMENTARY LOGIC; GATE DIELECTRICS;
D O I：
10.7567/APEX.8.065101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Multilevel memories have attracted significant interest because of their larger memory density per unit cell. Here, we investigated multilevel operation with ambipolar carbon nanotube thin-film transistors. Three distinct conduction states and a direct change between any of them were demonstrated by selecting appropriate values for the magnitude and duration of each program/erase voltage pulse. A low operation voltage of 5V and a short duration of 1 s were obtained by utilizing a bilayer Al2O3-epoxy dielectric to enhance the gate modulation efficiency. A tradeoff exists between low-voltage operation and fast switching for a given device. (C) 2015 The Japan Society of Applied Physics
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页数：4
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