Aerosol-assisted CVD of SnO from stannous alkoxide precursors

被引:16
|
作者
Hill, Michael S. [1 ]
Johnson, Andrew L. [1 ]
Lowe, John P. [1 ]
Molloy, Kieran C. [1 ]
Parish, James D. [1 ]
Wildsmith, Thomas [1 ]
Kingsley, Andrew L. [2 ]
机构
[1] Univ Bath, Dept Chem, Bath BA2 7AY, Avon, England
[2] SAFC Hitech Ltd, Wirral CH62 3QF, Merseyside, England
基金
英国工程与自然科学研究理事会;
关键词
X-RAY-DIFFRACTION; OXIDE THIN-FILMS; TIN OXIDE; CYCLIC DIAZASTANNYLENES; BIVALENT GERMANIUM; CRYSTAL-STRUCTURE; ANODE MATERIALS; NEO-PENTOXIDE; DISPROPORTIONATION; LEAD;
D O I
10.1039/c6dt02508k
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
The stannous alkoxides [Sn(OR)(2)] [R = i-Pr, t-Bu, C(Et) Me-2, CHPh2, CPh3] have been synthesised by reaction of Sn(NR'(2))(2) with two equivalents of HOR [R' = Me, R = i-Pr; R' = SiMe3, R = t-Bu, C(Et) Me-2, CHPh2, CPh3]. Single crystal X-ray diffraction analysis of the bis(diphenylmethoxide) (4) and bis(triphenylmethoxide) (5) species have shown them to comprise three-coordinate Sn(II) centres through dimerisation in the solid state with the alkoxide units adopting transoid and cisoid configurations across the {Sn2O2} cores respectively. Thermogravimetric analysis indicates clean decomposition and some evidence of volatility at temperatures > 200 degrees C for all three aliphatic alkoxides, whereas both the diphenyl-and triphenylmethoxide compounds provide higher decomposition temperatures and, for the triphenylmethoxide derivative, a residual mass consistent with the formation of a carbon-containing residue. The previously reported iso-propoxide (1) and tert-butoxide (2) derivatives have been utilised in toluene solution to deposit SnO thin films by aerosol-assisted chemical vapour deposition (AACVD) on glass at temperatures between 300 and 450 degrees C. While SnO is deposited under hot wall conditions as the only identifiable phase by p-XRD and Raman spectroscopy for both precursors, morphological analysis by SEM reveals inferior substrate coverage in comparison to previously reported ureide-based precursor systems.
引用
收藏
页码:18252 / 18258
页数:7
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