Millimeter-Wave IC Design Techniques for Beam-Forming Applications

被引：0

作者：

Meng, Fanyi ^{[1
]}

Boon, Chirn Chye ^{[1
]}

Xu, Shanshan ^{[1
]}

Ma, Kaixue ^{[2
]}

Yeo, Kiat Seng ^{[3
]}

机构：

[1] Nanyang Technol Univ, 50 Nanyang Ave, Singapore, Singapore

[2] Univ Elect Sci & Technol China, Chengdu, Peoples R China

[3] Singapore Univ Technol & Design, 8 Somapah Rd, Singapore, Singapore

来源：

2016 IEEE INTERNATIONAL WORKSHOP ON ELECTROMAGNETICS: APPLICATIONS AND STUDENT INNOVATION COMPETITION (IWEM) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper presents some key circuit design techniques for millimeter-wave ICs, especially for beam-forming applications. Firstly, the world-first CMOS SPDT switches operating beyond 140 GHz are introduced. Two prototypes, at 130-180 GHz and 220-285 GHz respectively, demonstrate the magnetic switchable artificial resonator concept and achieve size reduction over 90% (in terms of wavelength). Secondly, two 60-GHz fine-resolution phase shifters are presented, one with 3-bit 90 phase control capability while the other one featured with 5 bit 360. Lastly, a 60-GHz bidirectional switchless LNAPA is demonstrated. All the works are measured and achieve excellent performance.

引用

页数：3

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