Mobility edge in nondegenerate semiconductor with random potential of charged impurities

被引：0

作者：

Kagan, MS ^{[1
]}

Landsberg, EG ^{[1
]}

Zhdanova, NG ^{[1
]}

Altukhov, IV ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Radioengn & Elect, Moscow 103907, Russia

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1998年 / 210卷 / 02期

关键词：

D O I：

10.1002/(SICI)1521-3951(199812)210:2<891::AID-PSSB891>3.0.CO;2-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The low-temperature mobility saturation found in a nondegenerate 3D electron gas at strong charged-impurity scattering was shown to be due to the existence of a quantum mobility edge. The negative magnetoresistance caused by magnetic field suppression of interference corrections to the conductivity was observed. The interference corrections were found to be small near the mobility edge.

引用

页码：891 / 895

页数：5

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