Structural characterization of reactive ion etched semiconductor nanostructures using x-ray reciprocal space mapping

被引：0
|
作者：
Bauer, G [1 ]
Darhuber, AA [1 ]
Holy, V [1 ]
机构：
[1] JOHANNES KEPLER UNIV,INST HALBLEITERPHYS,A-4040 LINZ,AUSTRIA
来源：
SURFACE/INTERFACE AND STRESS EFFECTS IN ELECTRONIC MATERIALS NANOSTRUCTURES | 1996年 / 405卷
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：359 / 370
页数：12
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