The improved polarization retention through high-field charge injection in highly strained BiFeO3 thin films with preferred domain orientations

被引：15
|
作者：
Liu, X. B. [1 ]
Ding, N. F. [2 ]
Jiang, A. Q. [1 ]
Yang, P. X. [2 ]
机构：
[1] Fudan Univ, State Key Lab ASIC & Syst, Dept Microelect, Shanghai 200433, Peoples R China
[2] E China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 13期
基金：
中国国家自然科学基金;
关键词：
FERROELECTRIC PROPERTIES;
D O I：
10.1063/1.3697989
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We transferred nanosecond ferroelectric domain switching currents of leaky Fe-enriched bismuth ferrite thin films into polarization-electric (P-E) hysteresis loops from which nanosecond-range polarization retention as well as imprint was extracted. All the films suffer from a quick remanent polarization loss after 4 mu s due to the appearance of a strong depolarization field arising from frozen compensation charges and large lattice-mismatching stresses. However, under an opposite field stressing the polarization enhances via near-electrode charge injection and approaches a theoretical value after 1000 s, which supplies an effective way to symmetrize the P-E loop of a highly strained ferroelectric thin film. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3697989]
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页数：4
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