Stability of high-k thin films for wet process

被引：0

作者：

Kikuchi, A ^{[1
]}

Akama, S ^{[1
]}

Ohmi, S ^{[1
]}

Iwai, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS I | 2003年 / 2002卷 / 28期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

For the integration of the high-k dielectrics to advanced CMOS process, the stabilities of high-k thin films for moisture ambient, ultra-pure water and resist process were investigated. Not only rare earth oxides but also ZrO2 was found to be degraded in the stability test. To suppress the degradation during the wet process, it is recommendable to cover the films by gate electrode and sidewalls by in-situ or dry process.

引用

页码：157 / 168

页数：12

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