Modeling alpha-particle-induced accelerated soft error rate in semiconductor memory

被引：5

作者：

Gong, MK ^{[1
]}

Kim, DW ^{[1
]}

Lee, CY ^{[1
]}

Choi, DS ^{[1
]}

Kang, DG ^{[1
]}

机构：

[1] Hynix Semicond Inc, Memory Res & Dev Div, Inchon 467701, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 07期

关键词：

alpha particle incident angle; ASER integral model; capping layer; maximum in ASER;

D O I：

10.1109/TED.2003.813905

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an analytic integral model for the accelerated soft error rate (ASER). The model took into account the physical and structural parameters as four alpha incident angles and an angular function. Two angles were related to charge collection and another two angles and an angular function were related to measurement configuration and how much alpha flux arrived. The model was verified by measuring ASER in 8 M static RAM. The model could explain ASER characteristics of saturation, exponential dependence, and vanishing with the power supply voltage. The model also reproduced an extraordinary phenomenon that there is a maximum in ASER with respect to the thickness of the capping layer on the static RAM.

引用

页码：1652 / 1657

页数：6

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