Effect of carbon co-doping on III-As based diluted magnetic semiconductors

被引：0
|
作者：
Choi, HK
Shim, SB
Suh, KS
Kim, YS
Lee, JS
Khim, ZG
Jeong, IT
Woo, JC
Abernathy, CR
Pearton, SJ
Park, YD
机构：
[1] Seoul Natl Univ, CSCMR, Seoul 151747, South Korea
[2] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea
[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[4] Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul 136791, South Korea
来源：
COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS | 2005年 / 184卷
关键词：
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report on the magnetic and magneto-transport properties of carbon co-doped III-As based diluted magnetic semiconductors (DMS). Highly carbon doped GaAs and AlAs epilayers were realized by gas-source molecular beam epitaxy on semi-insulating GaAs substrates. The resulting epilayers were ion-implanted with various transition metal impurities.
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页码：145 / 148
页数：4
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