Room-Temperature Ferromagnetism in Cobalt and Aluminum Co-Doping Tin Dioxide Diluted Magnetic Semiconductors

被引：7

作者：

Ning, Xingzhi ^{[1
]}

Liu, XiaoFang ^{[1
]}

Yu, Ronghai ^{[1
]}

Shi, Ji ^{[2
]}

Nakamura, Yoshio ^{[2
]}

机构：

[1] Tsinghua Univ, Adv Mat Lab, Dept Mat Sci & Engn, Beijing 100084, Peoples R China

[2] Tokyo Inst Technol, Dept Met & Ceram, Tokyo 1528550, Japan

来源：

MATERIALS TRANSACTIONS | 2010年 / 51卷 / 03期

基金：

美国国家科学基金会;

关键词：

diluted magnetic semiconductor; tin dioxide; ferromagnetism; microstructure;

D O I：

10.2320/matertrans.M2009373

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Sn0.897Co0.10Al0.003O2 diluted magnetic semiconductor films were grown on (100) silicon substrate by magnetron sputtering and then annealed at 300 degrees C and 500 degrees C for 1.5 h, respectively. Room temperature ferromagnetism was observed for the as-deposited film. The saturation magnetization (M-s) decreases as annealing temperature increases, and the value of Ms for the films annealed at 500 degrees C is about half of the value for the as-deposited films. The electrical resistivity of Sn0.897Co0.10Al0.003O2 drops in a range of 10(6) to 10 Omega.m with increasing the annealing temperature. The XRD and HRTEM investigation illustrates that no impurity phase and Co clusters exist in the films, indicating the ferromagnetism of the films is intrinsic. The F-center-mediated exchange model is adopted to explain the room-temperature ferromagnetism of the films. [doi: 10.2320/matertrans.M2009373]

引用

页码：557 / 560

页数：4

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