Circuit Modeling of Shielded Differential Carbon Nanotube Bundle Filled Through-Silicon Vias

被引：1

作者：

Hu, Qing-Hao ^{[1
]}

Zhao, Wen-Sheng ^{[1
]}

Wang, Da-Wei ^{[1
]}

Wang, Gaofeng ^{[1
]}

机构：

[1] Hangzhou Dianzi Univ, MOE Engn Res Ctr Smart Microsensors & Microsyst, Sch Elect & Informat, Hangzhou 310018, Peoples R China

来源：

2020 IEEE MTT-S INTERNATIONAL CONFERENCE ON NUMERICAL ELECTROMAGNETIC AND MULTIPHYSICS MODELING AND OPTIMIZATION (NEMO 2020) | 2020年

关键词：

Multi-bit TSVs; shielded differential through-silicon vias (SD-TSVs); carbon nanotuhes (CNT); equivalent-circuit model;

D O I：

10.1109/NEMO49486.2020.9343548

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a modified shielded differential through-silicon vias (SD-TSVs) with the concept of multi-hit TSV is presented. The TSV is filled with vertically aligned carbon nanotube (VACNT) array, and two metal pads are deposited on the sides of the surface of that TSV to form differential signal transmission paths. The equivalent circuit model is established, meanwhile, the partial-element equivalent-circuit (PEEC) method is utilized to extract the frequency-dependent impedance of that SD-TSVs. By virtue of the equivalent circuit model, the electrical performance of the proposed SD-TSVs is investigated.

引用

页数：3

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