Silicon nano-wires grown at low temperature

被引：4
|
作者：
Niu, JJ
Sha, J
Wang, L
Ji, YJ
Yang, DR
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2005年 / 27卷 / 03期
基金：
中国国家自然科学基金;
关键词：
nano wires; silicon; low temperature;
D O I：
10.1016/j.physe.2004.12.014
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Quantities of crystalline array-orderly silicon nano-wires (SiNWs) were fabricated using chemical-vapor-deposition (CVD) method at low temperature (550-400 degrees C). In the experiments, the decreasing temperature process was used. By means of transmission electron spectroscopy, X-ray diffraction and Raman spectroscopy, it was found that the SiNWs were well crystallized. Finally, the growth mechanism of the SiNWs during the decreasing process was discussed. (c) 2005 Elsevier B.V. All rights reserved.
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页码：309 / 313
页数：5
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