Synthesis of porous silicon nano-wires and the emission of red luminescence

被引:13
|
作者
Sun Congli [1 ]
Hu Hao [2 ]
Feng Huanhuan [1 ]
Xu Jingjing [1 ]
Chen Yu [1 ]
Jin Yong [1 ]
Jiao Zhifeng [1 ]
Sun Xiaosong [1 ]
机构
[1] Sichuan Univ, Sch Mat Sci & Engn, Chengdu 610064, Sichuan, Peoples R China
[2] Sichuan Univ, Natl Engn Res Ctr Biomat, Chengdu 610064, Sichuan, Peoples R China
关键词
Surface roughness or porosity of silicon nanowires; Luminescent SiOx coating; NANOWIRES; GROWTH; ARRAYS;
D O I
10.1016/j.apsusc.2013.05.114
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This very paper is focusing on the characterization of porous silicon nano-wires prepared via a two-step route, the electroless chemical etching and the following post-treatment of HF/HNO3 solution. Hence, scanning electron microscopy, transmission electron microscopy and confocal fluorescence microscopy are employed for this purpose. From the results of experiments, one can find that the as-prepared silicon nano-wire is of smooth surface and that no visible photo-luminescence emission could be seen. However, the porous structure can be found in the silicon nano-wire treated with HF/HNO3 solution, and the clear photo-luminescence emission of 630 nm can be recorded with a confocal fluorescence microscope. The transmission electron microscopy test tells that the porous silicon nano-wire is made up of a porous crystalline silicon nano-core and a rough coating of silicon oxide. Besides, based on the post-HF- and -H2O2- treatments, the emission mechanism of the red luminescence has been discussed and could be attributed to the quantum confinement/luminescence center model which could be simply concluded as that the electron-hole pairs are mainly excited inside the porous silicon nano-core and then tunneling out and recombining at the silicon oxide coating. (C) 2013 Elsevier B. V. All rights reserved.
引用
收藏
页码:259 / 263
页数:5
相关论文
共 50 条
  • [1] Tiny silicon nano-wires synthesis on silicon wafers
    Niu, JJ
    Sha, J
    Ji, YJ
    Yang, DR
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 24 (3-4): : 328 - 332
  • [2] Field electron emission device using silicon nano-wires
    Sawada, K
    Futagawa, M
    Arai, Y
    Kawano, T
    Takao, H
    Ishida, M
    [J]. INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, 2002, : 401 - 404
  • [3] Silicon nano-wires grown at low temperature
    Niu, JJ
    Sha, J
    Wang, L
    Ji, YJ
    Yang, DR
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 27 (03): : 309 - 313
  • [4] Surface states and conductivity of silicon nano-wires
    Bhaskar, Umesh Kumar
    Pardoen, Thomas
    Passi, Vikram
    Raskin, Jean-Pierre
    [J]. JOURNAL OF APPLIED PHYSICS, 2013, 113 (13)
  • [5] Boron-doped silicon nano-wires
    Niu, Jun Jie
    Wang, Jian Nong
    Chen, Yi Xiang
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2007, 139 (01): : 95 - 98
  • [6] Silicon nano-wires fabricated by thermal evaporation of silicon wafer
    Niu, JJ
    Sha, J
    Liu, ZH
    Su, ZX
    Yu, J
    Yang, DR
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 24 (3-4): : 268 - 271
  • [7] A novel sulfide-assisted growth of silicon nano-wires
    Niu, JJ
    Sha, J
    Liu, ZH
    Yu, J
    Su, ZX
    Yang, Q
    Yang, DR
    [J]. SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials, 2004, : 164 - 167
  • [8] On the study of silicon nano-wires self-assembled as particles
    Ze, Z
    Lee, ST
    [J]. CHINESE PHYSICS, 2001, 10 : S111 - S116
  • [9] Array-orderly single crystalline silicon nano-wires
    Niu, JJ
    Sha, J
    Ma, XY
    Xu, J
    Yang, D
    [J]. CHEMICAL PHYSICS LETTERS, 2003, 367 (5-6) : 528 - 532
  • [10] The synthesis and characterization of SnO2 nano-wires
    Xu Bingshe
    Li Junshou
    Li Sanqun
    Yujun Yin
    [J]. RARE METAL MATERIALS AND ENGINEERING, 2007, 36 : 492 - 495