Memory Effects in Photo-induced Femtosecond Magnetization Rotation in a Ferromagnetic Semiconductor

被引：0

作者：

Cotoros, Ingrid ^{[1
,2
]}

Wang, Jigang ^{[1
,2
]}

Liu, Xinyu ^{[3
]}

Furdyna, Jacek K. ^{[3
]}

Chovan, Jaroslav ^{[4
]}

Perakis, Ilias E. ^{[4
]}

Chemla, Daniel S. ^{[1
,2
]}

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[2] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

[4] Univ Crete, Dept Phys, Iraklion, Greece

来源：

ULTRAFAST PHENOMENA XVI | 2009年 / 92卷

关键词：

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on the first observation of photo-induced femtosecond cooperative magnetization rotation at the non-equilibrium, charge distribution timescale, in ferromagnetic semiconductor GaMnAs, enabling the ultrafast detection of four-state magnetic memory.

引用

页码：212 / +

页数：2

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