Memory Effects in Photo-induced Femtosecond Magnetization Rotation in a Ferromagnetic Semiconductor

被引：0
|
作者：
Cotoros, Ingrid [1 ,2 ]
Wang, Jigang [1 ,2 ]
Liu, Xinyu [3 ]
Furdyna, Jacek K. [3 ]
Chovan, Jaroslav [4 ]
Perakis, Ilias E. [4 ]
Chemla, Daniel S. [1 ,2 ]
机构：
[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
[3] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA
[4] Univ Crete, Dept Phys, Iraklion, Greece
来源：
ULTRAFAST PHENOMENA XVI | 2009年 / 92卷
关键词：
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We report on the first observation of photo-induced femtosecond cooperative magnetization rotation at the non-equilibrium, charge distribution timescale, in ferromagnetic semiconductor GaMnAs, enabling the ultrafast detection of four-state magnetic memory.
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页码：212 / +
页数：2
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