Two-dimensional drift-diffusion simulation of superficial strained-Si/Si1-xGex channel metal-oxide-semiconductor field-effect transistors

被引：0

作者：

Roldan, JB ^{[1
]}

Gamiz, F ^{[1
]}

Lopez-Villanueva, JA ^{[1
]}

Cartujo, P ^{[1
]}

机构：

[1] Univ Granada, Fac Ciencias, Dept Elect & Tecnol Comp, E-18071 Granada, Spain

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 03期

关键词：

D O I：

10.1116/1.589935

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of superficial strained Si/Si1-xGex channel metal-oxide-semiconductor field-effect transistors has been described making use of a two-dimensional drift-diffusion simulator including inversion layer quantization and low-field mobility curves obtained by means of a Monte Carlo simulator. We have reproduced experimental results. In addition, the dependencies of the performance enhancement obtained in these devices on the germanium mole fraction and the drain-source and gate-source voltages are described in depth. (C) 1998 American Vacuum Society.

引用

页码：1538 / 1540

页数：3

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