Comparative analysis of the readout front-end electronics implemented in deep submicron technologies

被引：4
|
作者：
Kleczek, R. [1 ]
Kmon, P. [1 ]
机构：
[1] AGH Univ Sci & Technol, Ave A Mickiewicza 30, PL-30059 Krakow, Poland
来源：
JOURNAL OF INSTRUMENTATION | 2018年 / 13卷
关键词：
Analogue electronic circuits; Front-end electronics for detector readout; VLSI circuits; PIXEL DETECTORS;
D O I：
10.1088/1748-0221/13/11/C11002
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
This paper presents the impact of the employed CMOS nanometer technologies (28 nm and 40 nm) on the readout front-end electronics parameters with the emphasis on the count-rate capability and noise performance. The fast signal processing readout front-end electronics is analyzed by providing mathematical formulas with the highlight on technology-related parameters. The front-end electronics input transistor parameters are also compared among considered technologies. Finally, the complete channel, which analog core based on the charge sensitive amplifier, dedicated for pixel detector readout for a given set of requirements is designed and verified in terms of count-rate performance.
引用
收藏
页数：10
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