Doping of Carbon Layers Grown by the Pulsed Laser Technique

被引：0

作者：

Danilov, Yu A. ^{[1
]}

Alaferdov, A., V ^{[1
,2
]}

Vikhrova, O. V. ^{[1
]}

Zdoroveyshchev, D. A. ^{[1
]}

Kovalskiy, V. A. ^{[3
]}

Kriukov, R. N. ^{[1
]}

Kuznetsov, Yu M. ^{[1
]}

Lesnikov, V. P. ^{[1
]}

Nezhdanov, A., V ^{[1
]}

Drozdov, M. N. ^{[4
]}

机构：

[1] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603022, Russia

[2] Univ Estadual Campinas, Ctr Semicond Components & Nanotechnol, BR-13083870 Campinas, SP, Brazil

[3] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow Region, Russia

[4] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 607680, Russia

来源：

SEMICONDUCTORS | 2021年 / 55卷 / 08期

基金：

俄罗斯基础研究基金会;

关键词：

pulsed laser deposition; carbon layers; doping; transition-metal impurities; RAMAN-SPECTROSCOPY; GRAPHENE; GRAPHITE;

D O I：

10.1134/S1063782621080054

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The possibilities of doping carbon layers grown by pulsed laser deposition with transition-metal impurities are analyzed. The composition and optical and electrical parameters of structures on GaAs and Si/SiO2 substrates are studied. It is shown that the introduction of such atoms as Fe ones modifies the magnetic properties of layers, which are responsible for nonlinear magnetic-field dependences of the Hall effect at temperatures of up to 300 K.

引用

页码：660 / 666

页数：7

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