A Triple-Point Model for Circuit-Level Reliability Analysis

被引：0

作者：

Chen, Chunhong ^{[1
]}

Cai, Jinchen ^{[1
]}

Zhan, Suoyue ^{[1
]}

机构：

[1] Univ Windsor, Dept Elect & Comp Engn, Windsor, ON N9B 3P4, Canada

来源：

2018 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2018年

基金：

加拿大自然科学与工程研究理事会; 欧洲研究理事会;

关键词：

circuit reliability analysis; triple-point model; signal probability; combinational logic circuits;

D O I：

10.1109/ISCAS.2018.8350987

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reliability analysis for combinational logic circuits can be computationally complex due to a large number of inputs and possible signal correlations. This paper presents a triple-point model for circuit-level reliability analysis by using a closed-form expression in terms of output signal probabilities from both erroneous and error-free circuits. Since signal probabilities are relatively easier to be obtained by analysis and/or simulation, this work can simplify and speed up the analysis process for large-scale circuits. Simulation results with benchmark circuits show that the proposed model produces an average error of 2% in estimating circuit reliability, compared to 12% with the existing related work.

引用

页数：4

共 50 条

[1] Circuit-level reliability requirements for Cu metallization
Alam, SM
Gan, CL
Wei, FL
Thompson, CV
Troxel, DE
[J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2005, 5 (03) : 522 - 531
[2] Circuit-level model of semiconductor photodetectors
Mena, PV
Morikuni, JJ
Harton, AV
Wyatt, KW
[J]. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VII, 1999, 3625 : 560 - 570
[3] Assessing circuit-level hot-carrier reliability
Jiang, WJ
Le, H
Chung, J
Kopley, T
Marcoux, P
Dai, CH
[J]. 1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL, 1998, : 173 - 179
[4] AC TDDB Analysis for Circuit-Level Gate Oxide Wearout Reliability Assessment
Kopley, T. E.
O'Brien, K.
Chang, W. -C.
[J]. 2016 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW), 2016, : 73 - 76
[5] Experiments and models for circuit-level assessment of the reliability of Cu metallization
Thompson, CV
Gan, CL
Alam, SM
Troxel, DE
[J]. PROCEEDINGS OF THE IEEE 2004 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2004, : 69 - 71
[6] Topology of triple-point metals
Georg W.Winkler
Sobhit Singh
Alexey A.Soluyanov
[J]. Chinese Physics B, 2019, 28 (07) : 58 - 76
[7] THE TRIPLE-POINT TEMPERATURE OF TELLURIUM
MACHOL, RE
WESTRUM, EF
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1958, 62 (03): : 361 - 362
[8] DEMONSTRATION TRIPLE-POINT CELL
ARMENTRO.C
[J]. AMERICAN JOURNAL OF PHYSICS, 1967, 35 (09) : R10 - &
[9] A triple-point Whitney trick
Melikhov, Sergey A.
[J]. JOURNAL OF TOPOLOGY AND ANALYSIS, 2020, 12 (04) : 1041 - 1046
[10] On the Circuit-Level Reliability Degradation Due to AC NBTI Stress
Chenouf, Amel
Djezzar, Boualem
Benabdelmoumene, Abdelmadjid
Tahi, Hakim
[J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2016, 16 (03) : 290 - 297

← 1 2 3 4 5 →