Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride

被引：499
|
作者：
Park, NM
Choi, CJ
Seong, TY
Park, SJ [1 ]
机构：
[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea
[2] Kwangju Inst Sci & Technol, Ctr Optoelect Mat Res, Kwangju 500712, South Korea
来源：
PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 07期
关键词：
D O I：
10.1103/PhysRevLett.86.1355
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Amorphous silicon quantum dots (a-Si QDs) were grown in a silicon nitride film by plasma enhanced chemical vapor deposition. Transmission electron micrographs clearly demonstrated that tr-Si QDs were formed in the silicon nitride. Photoluminescence and optical absorption energy measurement of cl-Si QDs with various sizes revealed that tuning of the photoluminescence emission from 2.0 to 2.76 eV is possible by controlling the size of the tr-Si QD. Analysis also showed that the photoluminescence peak energy E was related to the size of the a-Si QD, a (nm) by E(eV) = 1.56 + 2.40/a(2). which is a clear evidence for the quantum confinement effect in a-Si QDs.
引用
收藏
页码：1355 / 1357
页数：3
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