Ni-Silicide Schottky Barrier Micropyramidal Photodetector Array

被引：1

作者：

Bidney, Grant W. ^{[1
,2
]}

Jin, Boya ^{[1
]}

Deguzman, Lou ^{[1
]}

Duran, Joshua M. ^{[2
]}

Ariyawansa, Gamini ^{[2
]}

Anisimov, Igor ^{[2
]}

Limberopoulos, Nicholaos, I ^{[2
]}

Urbas, Augustine M. ^{[3
]}

Allen, Kenneth W. ^{[4
]}

Gunapala, Sarath D. ^{[5
]}

Astratov, Vasily N. ^{[1
,2
]}

机构：

[1] Univ North Carolina Charlotte, Ctr Optoelect & Opt Commun, Dept Phys & Opt Sci, Charlotte, NC 28223 USA

[2] Air Force Res Lab, Sensors Directorate, Wright Patterson AFB, OH 45433 USA

[3] Air Force Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

[4] Georgia Inst Technol, Georgia Tech Res Inst, Adv Concepts Lab, Atlanta, GA 30332 USA

[5] CALTECH, Jet Prop Lab, 4800 Oak Grove Dr, Pasadena, CA 91030 USA

来源：

PROCEEDINGS OF THE 2021 IEEE NATIONAL AEROSPACE AND ELECTRONICS CONFERENCE (NAECON) | 2021年

基金：

美国国家航空航天局;

关键词：

infrared photodetectors; Schottky barrier photodetector; light concentrators; PYRAMIDS; TMAH;

D O I：

10.1109/NAECON49338.2021.9696408

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

In attempt to increase the quantum yield of metal/silicide Schottky barrier photodetectors, in this work we fabricated and tested Si micropyramidal arrays which are capable to resonantly trap photons in the photodetector areas. To simplify testing, Ni/silicide Schottky barrier photodetectors were formed on the entire 1.5 x 1.5 mm areas occupied by the micropyramidal arrays. Preliminary testing results revealed potentially stronger photoresponse of micropyramids with narrow tops, but further studies are required to compare the performance of such novel photodetector arrays with different geometrical parameters of micropyramids.

引用

页码：116 / 118

页数：3

共 50 条

[1] Schottky barrier height measurement of swift heavy ion intermixed Ni-silicide interface
Sisodia, V
Kabiraj, D
Jain, IP
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 225 (03): : 256 - 260
[2] INFLUENCE OF INTERFACE QUALITY ON THE SCHOTTKY-BARRIER HEIGHT IN THE EPITAXIAL NI-SILICIDE SI(111) SYSTEM
LIEHR, M
SCHMID, PE
LEGOUES, FK
HO, PS
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1190 - 1191
[3] ALUMINUM AND NI-SILICIDE LATERAL REACTIONS
LIU, JC
MAYER, JW
JOURNAL OF MATERIALS RESEARCH, 1990, 5 (02) : 334 - 340
[4] Ni-silicide precursor for gate electrodes
Ishikawa, M.
Muramoto, I.
Machida, H.
Imai, S.
Ogura, A.
Ohshita, Y.
THIN SOLID FILMS, 2007, 515 (12) : 4980 - 4982
[5] INFLUENCE OF AU AS AN IMPURITY IN NI-SILICIDE GROWTH
HUNG, LS
ZHENG, LR
MAYER, JW
JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 792 - 795
[6] Silicides for the 100-nm node and beyond: Co-silicide, Co(Ni)-silicide and Ni-silicide
Lauwers, A
de Potter, M
Chamirian, O
Lindsay, R
Demeurisse, C
Vrancken, C
Maex, K
MICROELECTRONIC ENGINEERING, 2002, 64 (1-4) : 131 - 142
[7] SILICIDE FORMATION IN NI-SI SCHOTTKY-BARRIER DIODES
COE, DJ
RHODERICK, EH
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (06) : 965 - 972
[8] Chemical vapor deposition of Ni-silicide for gate electrodes
Ishikawa, M
Muramoto, I
Machida, H
Imai, S
Ogura, A
Ohshita, Y
ADVANCED METALLIZATION CONFERENCE 2005 (AMC 2005), 2006, : 205 - 210
[9] Formation of Ni-Silicide at the Interface of Ni/4H-SiC
Jung, Younghun
Kim, Jihyun
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (05) : H551 - H553
[10] Low temperature spike anneal for Ni-silicide formation
Lauwers, A
Kittl, JA
Van Dal, M
Chamirian, O
Lindsay, R
de Potter, M
Demeurisse, C
Vrancken, C
Maex, K
Pagès, X
Van der Jeugd, K
Kuznetsov, V
Granneman, E
MICROELECTRONIC ENGINEERING, 2004, 76 (1-4) : 303 - 310

← 1 2 3 4 5 →