Fabrication of a Si stencil mask for the X-ray lithography using a dry etching technique

被引:10
|
作者
Mekaru, Harutaka [1 ]
Takano, Takayuki [1 ]
Awazu, Koichi [2 ]
Maeda, Ryutaro [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Adv Mfg Res Inst, 1-2-1 Namiki, Tsukuba, Ibaraki 3058564, Japan
[2] Natl Inst Adv Ind Sci & Technol, Ctr Appl Near Field Opt, Tsukuba, Ibaraki 3058562, Japan
来源
INTERNATIONAL MEMS CONFERENCE 2006 | 2006年 / 34卷
关键词
D O I
10.1088/1742-6596/34/1/142
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
We fabricated a Si stencil X-ray mask only in a dry process without electroplating and chemical etching. An X-ray absorber of thickness 30 m with vertical sidewalls was able to be fabricated. In addition, we succeeded in demonstration of the X-ray lithography in the beam line BL-4 of the synchrotron radiation facility TERAS of AIST. Line and space patterns of line width 2 - 200 mu m were transcribed plainly on the surface of a PMMA sheet. It was confirmed that the edge of PMMA microstructures was sharp. There is a possibility that this Si stencil mask can be applied as an X-ray mask for the deep X-ray lithography.
引用
收藏
页码:859 / 864
页数:6
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