Influence of substrate temperature on mechanical, optical and electrical properties of ZnO:Al films

被引:70
|
作者
Wen, Ruitao [1 ]
Wang, Laisen [1 ]
Wang, Xuan [1 ]
Yue, Guang-Hui [1 ]
Chen, Yuanzhi [1 ]
Peng, Dong-Liang [1 ]
机构
[1] Xiamen Univ, Dept Mat Sci & Engn, Coll Mat, Xiamen 361005, Peoples R China
基金
美国国家科学基金会;
关键词
Nanostructures; Thin films; Sputtering; Mechanical properties; High transparency; ZINC-OXIDE FILMS; TRANSPARENT; DEPENDENCE;
D O I
10.1016/j.jallcom.2010.08.034
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The Al-doped zinc oxide (ZnO:Al) films were prepared on quartz glass flakes and silicon wafers by radio frequency (RF) magnetron sputtering which uses an aluminum-doped zinc oxide ceramic target. Meanwhile, their properties were characterized by scanning electron microscopy, X-ray diffraction, infrared-UV spectrophotometry, resistance measurement, nano-scratch and indentation test. Evolutions of the structural, optical, electrical and mechanical properties of the ZnO:Al films as a function of substrate temperatures ranging from room temperature to 400 degrees C were analyzed. The results indicate that the ZnO:Al films with a low resistivity value of 4.97 x 10(-4) Omega cm, a relatively higher adhesion and a high transparency above 90%, can be prepared at a substrate temperature of 400 degrees C. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:370 / 374
页数:5
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