Domain wall confinement with thin film edges

Magnetization distribution has been calculated for nanocontacts consisting of two films contacted at their edges by means of a micromagnetic framework using the Laudau-Lifshitz-Gilbert formula. Two types of junctions, crossing edges (X-type) and overlapped corner (C-type) of films, are considered. In the X-type configuration, the domain wall between two films having head-to-head or tail-to-tail magnetization direction is confined when the film thickness is lowered to 4 rim. If the small-size bridge is introduced to the junction area, the wall confinement is slightly enhanced. On the other hand, for the C-type junction the domain wall width decreases with increasing film thickness. These configurations can be potential candidates for the ballistic magnetoresistance sensor which can be manufactured using thin films. (C) 2004 Elsevier B.V. All rights reserved.