Diminished short channel effects in nanoscale double-gate silicon-on-insulator metal-oxide-semiconductor field-effect-transistors due to induced back-gate step potential

被引：17

作者：

Kumar, MJ ^{[1
]}

Reddy, GV ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, New Delhi 110016, India

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 9A期

关键词：

drain induced barrier lowering (DIBL); double gate; dual material gate; gate-to-gate coupling; silicon-on-insulator; MOSFET;

D O I：

10.1143/JJAP.44.6508

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we discuss how the short channel behavior in sub 100 nm channel range can be improved by inducing a step surface potential profile at the back gate of an asymmetrical double gate (DG) silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect-transistor (MOSFET) in which the front gate consists of two materials with different work functions.

引用

页码：6508 / 6509

页数：2

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