Tuneable electronic properties in graphene

被引:254
|
作者
Craciun, M. F. [1 ]
Russo, S. [2 ]
Yamamoto, M. [3 ]
Tarucha, S. [3 ]
机构
[1] Univ Exeter, Sch Engn, Ctr Graphene Sci, Exeter EX4 4QF, Devon, England
[2] Univ Exeter, Sch Phys, Ctr Graphene Sci, Exeter EX4 4QF, Devon, England
[3] Univ Tokyo, Dept Appl Phys, Tokyo 113, Japan
关键词
Graphene; Double-gated; p-n junctions; Graphene multilayers; FIELD-EFFECT TRANSISTORS; BERRYS PHASE; CARBON; TRANSPORT; BANDGAP; CONDUCTANCE; REFLECTION; LAYERS; FILMS;
D O I
10.1016/j.nantod.2010.12.001
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Novel materials are in great demand for future applications. The discovery of graphene, a one atom thick carbon layer, holds the promise for unique device architectures and functionalities exploiting unprecedented physical phenomena. The ability to embed graphene materials in a double gated structure allowed on-chip realization of relativistic tunneling experiments in single layer graphene, the discovery of a gate tunable band gap in bilayer graphene and of a gate tunable band overlap in trilayer graphene. Here we discuss recent advances in the physics and nanotechnology fabrication of double gated single- and few-layer graphene devices. Crown Copyright (C) 2010 Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:42 / 60
页数:19
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