Relation between product yield and plasma process induced damage

被引：14
|
作者：
Luchies, JM [1 ]
Simon, P [1 ]
Kuper, F [1 ]
Maly, W [1 ]
机构：
[1] Philips Semicond, NL-6534 AE Nijmegen, Netherlands
来源：
1998 3RD INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE | 1998年
关键词：
D O I：
10.1109/PPID.1998.725561
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The impact of plasma process induced damage (charging) on the yield of products in 75-120 Angstrom CMOS processes has been analyzed. It was shown that product yield loss is related to the threshold voltage, shift of charging sensitive test structures and thus to charging. A simple model is introduced in which the charging related yield loss component of products is expressed by the attributes of antennas and the extent of charging. The proposed model is found to predict charging related yield loss using only one process dependent parameter, as is shown for various products.
引用
收藏
页码：7 / 10
页数：4
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