Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films

被引：20
|
作者：
Lin, Chih-Yang [1 ,2 ]
Lin, Chun-Chieh [1 ,2 ]
Huang, Chun-Hsing [1 ,2 ]
Lin, Chen-Hsi [3 ]
Tseng, Tseung-Yuen [1 ,2 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
[3] Winbond Elect Corp, Hsinchu 300, Taiwan
来源：
SURFACE & COATINGS TECHNOLOGY | 2007年 / 202卷 / 4-7期
关键词：
sol-gel; SrZrO3; nonvolatile memory; resistive switching;
D O I：
10.1016/j.surfcoat.2007.07.052
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Hysteretic I-V characteristics of the SrZrO3 (SZO) thin films with various Mo-doping concentrations were investigated in the study. The 0.2 mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during successive operation. Both high and low conductive states were stable over 10(4) s. Multi-bit behavior was investigated by dc voltage sweeping with different spans of voltage scan for OFF-process and by various OFF-pulse voltages as well. The endurance test can be over 1000 times with no data loss found. The experimental results showed high potential for nonvolatile memory application. (c) 2007 Published by Elsevier B.V.
引用
收藏
页码：1319 / 1322
页数：4
相关论文
共 50 条
  • [1] Resistance switching properties of sol-gel derived SrZrO3 based memory thin films
    Liu, Chih-Yi
    Tseng, Tseung-Yuen
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (07) : 2157 - 2161
  • [2] Memory effect of sol-gel derived V-doped SrZrO3 thin films
    Liu, CY
    Chuang, CC
    Chen, JS
    Wang, A
    Jang, WY
    Young, JC
    Chiu, KY
    Tseng, TY
    THIN SOLID FILMS, 2006, 494 (1-2) : 287 - 290
  • [3] Current-voltage characteristics of sol-gel derived SrZrO3 thin films for resistive memory applications
    Wu, Jingxian
    Wen, Zheng
    Wu, Di
    Zhai, Haifa
    Li, Aidong
    JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 509 (05) : 2050 - 2053
  • [4] Fabrication and characterization of SrZrO3 thin films prepared by sol-gel
    Ling, HQ
    Li, AD
    Wu, D
    Tang, YF
    Liu, ZG
    Ming, NB
    MATERIALS CHEMISTRY AND PHYSICS, 2002, 75 (1-3) : 170 - 173
  • [5] Proton Conductivity Measurement of the Sol-Gel Derived Yttrium-doped SrZrO3 Thin Films for Fuel Cell Applications
    Uchiyama, Kiyoshi
    Isse, Yuri
    Nishida, Takashi
    Uraoka, Yukiharu
    2010 IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS (ISAF), 2010,
  • [6] Resistive Switching Properties of Cr-Doped SrZrO3 Thin Film on Si Substrate
    Yang, Min Kyu
    Ko, Tae Kuk
    Park, Jae-Wan
    Lee, Jeon-Kook
    KOREAN JOURNAL OF MATERIALS RESEARCH, 2010, 20 (05): : 241 - 245
  • [7] Stable resistive switching behaviors of sputter deposited V-doped SrZrO3 thin films
    Lin, Chun-Chieh
    Yu, Jung-Sheng
    Lin, Chih-Yang
    Lin, Chen-Hsi
    Tseng, Tseung-Yuen
    THIN SOLID FILMS, 2007, 516 (2-4) : 402 - 406
  • [8] Resistive switching mechanisms of V-doped SrZrO3 memory films
    Lin, Chun-Chieh
    Tu, Bing-Chung
    Lin, Chao-Cheng
    Lin, Chen-Hsi
    Tseng, Tseung-Yuen
    IEEE ELECTRON DEVICE LETTERS, 2006, 27 (09) : 725 - 727
  • [9] Resistive Switching Properties of Sol–Gel-Derived V-Doped SrTiO3 Thin Films
    Zhen Hua Tang
    Ying Xiong
    Ding Lin Xu
    Ming Hua Tang
    Zi Ping Wang
    Yong Guang Xiao
    Bo Wen Zeng
    Xiao Chen Gu
    Jian Cheng Li
    Long Hai Wang
    Journal of Electronic Materials, 2013, 42 : 2510 - 2515
  • [10] Resistive Switching Properties of Sol-Gel-Derived V-Doped SrTiO3 Thin Films
    Tang, Zhen Hua
    Xiong, Ying
    Xu, Ding Lin
    Tang, Ming Hua
    Wang, Zi Ping
    Xiao, Yong Guang
    Zeng, Bo Wen
    Gu, Xiao Chen
    Li, Jian Cheng
    Wang, Long Hai
    JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (08) : 2510 - 2515
12345