Structural and electrical characteristics of low-dielectric constant porous hydrogen silsesquioxane for Cu metallization

被引：0

作者：

Wang, JH ^{[1
]}

Liu, PT ^{[1
]}

Chang, TC ^{[1
]}

Chen, WJ ^{[1
]}

Cheng, SL ^{[1
]}

Lin, JY ^{[1
]}

Chen, LJ ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

来源：

THIN FILM MATERIALS, PROCESSES, AND RELIABILITY: PLASMA PROCESSING FOR THE 100 NM NODE AND COPPER INTERCONNECTS WITH LOW-K INTER-LEVEL DIELECTRIC FILMS | 2003年 / 2003卷 / 13期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The structural and electrical properties of porous hydrogen silsesquioxane have been characterized using a combination of Fourier transform infrared spectroscopy (FTIR), transmission electron microscope (TEM), Auger electron spectroscopy (AES), current-voltage analyzer and capacitance-voltage analyzer. The pores, about 2 nm in size and of spherical shape, were distributed randomly and uniformly in the porous HSQ film. The dielectric constant of porous HSQ film was as low as 2.1 owing to the high porosity and uniformity of the film. A smooth amorphous-like layer including Cu-O-Si was found to form between Cu and the porous HSQ film after annealing at 500 degreesC for 30 min. The mixed layer led to the higher leakage current of the porous HSQ film. Cu was found to diffuse into porous HSQ film after annealing at 600 degreesC for 30 min.

引用

页码：216 / 223

页数：8

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