Front-End Performance and Charge Collection Properties of Heavily Irradiated DNW MAPS

被引：13
|
作者：
Ratti, Lodovico [1 ,2 ]
Manghisoni, Massimo [1 ,3 ]
Re, Valerio [1 ,3 ]
Traversi, Gianluca [1 ,3 ]
Zucca, Stefano [1 ,2 ]
Bettarini, Stefano [4 ,5 ]
Morsani, Fabio [4 ]
Rizzo, Giuliana [4 ,5 ]
机构：
[1] INFN Pavia, I-27100 Pavia, Italy
[2] Univ Pavia, Dipartimento Elettron, I-27100 Pavia, Italy
[3] Univ Bergamo, Dept Ingn Ind, I-24044 Dalmine, BG, Italy
[4] INFN Pisa, I-56127 Pisa, Italy
[5] Univ Pisa, I-56127 Pisa, Italy
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2010年 / 57卷 / 04期
关键词：
Analog front-end; CMOS; deep N-well; ionizing radiation; MAPS; CMOS TECHNOLOGIES; NM; DEGRADATION; MECHANISMS; DETECTORS; DESIGN;
D O I：
10.1109/TNS.2009.2039003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Deep N-well (DNW) CMOS monolithic active pixel sensors (MAPS) fabricated in a 130 nm technology have been exposed to gamma-rays up to an integrated dose of about 10 Mrad and subjected to a 100 degrees C/168 h annealing cycle. Device tolerance to total ionizing dose has been evaluated by monitoring the change in charge sensitivity, noise and charge collection properties after each step of the irradiation and annealing campaign. Damage mechanisms and their relation to front-end architecture and sensor features are thoroughly discussed by comparing the response to ionizing radiation of different test structures and based on radiation induced degradation models in single MOS transistors.
引用
收藏
页码：1781 / 1789
页数：9
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