Three-dimensional skeleton assembled by carbon nanotubes/boron nitride as filler in epoxy for thermal management materials with high thermal conductivity and electrical insulation

被引:96
|
作者
Yang, Wang [1 ]
Wang, Yifan [1 ]
Li, Yun [1 ]
Gao, Can [1 ]
Tian, Xiaojuan [1 ]
Wu, Ni [1 ]
Geng, Zishuo [1 ]
Che, Sai [1 ]
Yang, Fan [1 ]
Li, Yongfeng [1 ]
机构
[1] China Univ Petr, State Key Lab Heavy Oil Proc, Changping 102249, Peoples R China
基金
中国国家自然科学基金;
关键词
Boron nitride; Carbon nanotubes; Three-dimensional structure; Thermal conductivity; Thermal management materials; BORON-NITRIDE; HIGH-EFFICIENCY; COMPOSITES; NANOCOMPOSITES; NETWORK; FUNCTIONALIZATION; FABRICATION; NANOSHEETS; ELECTRODE; GRAPHENE;
D O I
10.1016/j.compositesb.2021.109168
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Due to high aspect ratio, excellent thermal conductivity, and electrical insulation, boron nitride exhibits a great potential in the field of electronic packaging. However, its longitudinal thermal conductivity is far poor than horizontal thermal conductivity, which limits its application in a wider field. Herein, a three-dimensional (3D) network structure is constructed by coating boron nitride nanosheets/carbon nanotubes on foam skeleton derived from the commercial polyurethane (PU) (3D BNNS/CNTs). The in-situ grown CNTs on the surface of BNNS produce an interconnected network structure. The resultant 3D skeleton coupled with cross-linked BNNS/ CNTs endows it with excellent thermal and mechanical properties. After curing with epoxy resin, the optimized 3D BNNS/CNTs15 %/Epoxy composite obtains a high thermal conductivity of 1.49 W m-1 K-1 at a low loading of 20 wt%, which achieves a thermal conductivity enhancement of 1046 % compared to neat epoxy resin. Meanwhile, the synthesized 3D BNNS/CNTs15 %/Epoxy composite maintains a high electrical resistivity above 1010 omega m, high elastic modulus of 1.0 GPa and tensile stress of 35 MPa. Thus, this strategy may offer a new insight for constructing advanced packaging materials with excellent thermal and mechanical performances for electronic device.
引用
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页数:9
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