High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

被引：134
|
作者：
Liu, HY [1 ]
Childs, DT
Badcock, TJ
Groom, KM
Sellers, IR
Hopkinson, M
Hogg, RA
Robbins, DJ
Mowbray, DJ
Skolnick, MS
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Natl Ctr Technol 3, Sheffield S1 3JD, S Yorkshire, England
[2] Bookham Technol Plc, Towcester NN12 8EQ, Northants, England
[3] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 06期
基金：
英国工程与自然科学研究理事会;
关键词：
epitaxial growth; quantum dots (QDs); semiconductor diodes; semiconductor lasers;
D O I：
10.1109/LPT.2005.846948
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR)-coated facets has been utilized to obtain low threshold currents and threshold current densities for 1.3-mu m multilayer InAs-GaAs quantum-dot lasers. A very low continuous-wave (CW) room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A/cm(2) are achieved for a three-layer device with a 1-mm HR/HR cavity. For a 2-mm cavity, the CW threshold current density is as low as 17 A/cm(2) for an HR/HR device. An output power as high as 100 mW is obtained for a device with HR/cleaved facets.
引用
收藏
页码：1139 / 1141
页数：3
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