Depletion-mode n-channel organic field-effect transistors based on NTCDA

被引：13
|
作者：
Zhu, M [1 ]
Liang, GR [1 ]
Cui, TH [1 ]
Varahramyan, K [1 ]
机构：
[1] Louisiana Tech Univ, Inst Micromfg, Ruston, LA 71272 USA
来源：
SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 10期
关键词：
NTCDA; organic field-effect transistor (OFET); depletion-mode; energy level;
D O I：
10.1016/S0038-1101(03)00141-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The depletion-mode n-channel organic field-effect transistors (OFETs) based on naphthalene-tetracarboxylic-dianhydride (NTCDA) were fabricated and characterized. Electrical characteristics of the OFETs were demonstrated and analyzed under the depletion-mode operation. The mobility of NTCDA is about 0.016 cm(2) V-1 s(-1). The threshold voltage is -32 V, and cut off current is 1.76 nA. The on/off ratio extracted from transfer characteristics at saturation region (V-ds = 60 V) is 2.25 x 10(2). (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1855 / 1858
页数：4
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