Intersubband transitions in molecular-beam-epitaxy-grown wide band gap II-VI semiconductors

被引：4
|
作者：
Shen, A. [1 ]
Lu, H.
Tamargo, M. C.
Charles, W.
Yokomizo, I.
Song, C. Y.
Liu, H. C.
Zhang, S. K.
Zhou, X.
Alfano, R. R.
Franz, K. J.
Gmachl, C.
机构：
[1] CUNY City Coll, Dept Elect Engn, New York, NY 10031 USA
[2] CUNY City Coll, Dept Chem, New York, NY 10031 USA
[3] CUNY City Coll, Grove Sch Engn, New York, NY 10031 USA
[4] CNR, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[5] CUNY City Coll, Inst Ultrafast Spect & Lasers, Dept Phys, New York, NY 10031 USA
[6] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2007年 / 25卷 / 03期
基金：
美国国家航空航天局; 美国国家科学基金会;
关键词：
D O I：
10.1116/1.2720859
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors report the study of intersubband transitions in ZnCdMgSe-based wide band gap II-VI semiconductors. The samples were prepared by molecular beam epitaxy on InP substrates. Both ZnCdSe/ZnCdMgSe multiple quantum wells and CdSe/ZnCdMgSe quantum dot multilayer stacks were grown. Strong intersubband absorption was observed in the samples. The results show that these materials are very promising for fabricating imersubband devices in the mid- and near-infrared spectral ranges. (c) 2007 American Vacuum Society.
引用
收藏
页码：995 / 998
页数：4
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