Design of the Partial Concentrator Lens for III-V on Si Static Concentration

被引：4
|
作者：
Araki, Kenji [1 ]
Ota, Yasuyuki [2 ]
Lee, Kan-Hua [1 ]
Nishioka, Kensuke [2 ]
Yamaguchi, Masafumi [1 ]
机构：
[1] Toyota Technol Inst, Tempaku Ku, 2-12-2 Hisakata, Nagoya, Aichi, Japan
[2] Univ Miyazaki, 1-1 Gakuen Kibanadai Nishi, Miyazaki, Japan
来源：
13TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS (CPV-13) | 2017年 / 1881卷
关键词：
D O I：
10.1063/1.5001412
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
To compete with the flat-plate crystalline Silicon cell module, III-V on Si structure is developed. However, it is clear that the situation of the higher cost of III-V cell relative to the Silicon cell will be unchanged. Then, it is preferred concentrating III-V cell for further savings. The partial concentrator is expanding the acceptance angle despite the higher concentration ratio. It is achieved by better performance balance of on-axis and high incidence angle. The new and generalized design method of the partial concentrator was developed. The profile function was constructed by selected Zernike's polynomial considering rotational symmetry. The full conditions of the calculation including the initial value and the radial and azimuthal degree of the function were examined. It was found that the recommended radial and azimuthal degree were 12 and 12.
引用
收藏
页数：6
相关论文
共 50 条
  • [21] III-V/Si Integration for Photonics
    Reithmaier, J. P.
    Benyoucef, M.
    SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 6, 2016, 72 (04): : 171 - 179
  • [22] Analysis of the degradation of high concentrator III-v solar cells
    González, JR
    Baudrit, M
    Algora, C
    Rey-Stolle, I
    2005 Spanish Conference on Electron Devices, Proceedings, 2005, : 33 - 36
  • [23] Monolithic III-V/Si Integration
    Fitzgerald, E. A.
    Bulsara, M. T.
    Bai, Y.
    Cheng, C.
    Liu, W. K.
    Lubyshev, D.
    Fastenau, J. M.
    Wu, Y.
    Urtega, M.
    Ha, W.
    Bergman, J.
    Brar, B.
    Drazek, C.
    Daval, N.
    Letertre, F. D.
    Hoke, W. E.
    LaRoche, J. R.
    Herrick, K. J.
    Kazior, T. E.
    GRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS, 2009, 19 (05): : 345 - +
  • [24] III-V Integration on Si for Photonics
    Reithmaier, J. P.
    Benyoucef, M.
    2016 IEEE PHOTONICS SOCIETY SUMMER TOPICAL MEETING SERIES (SUM), 2016, : 189 - 190
  • [25] Heteroepitaxial technologies of III-V on Si
    Kawanami, H
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 66 (1-4) : 479 - 486
  • [26] Degradation study of III-V solar cells for concentrator applications
    van Riesen, S
    Bett, AW
    PROGRESS IN PHOTOVOLTAICS, 2005, 13 (05): : 369 - 380
  • [27] An Infant Mortality Study of III-V Multijunction Concentrator Cells
    Bosco, Nick
    Sweet, Cassi
    Ludowise, Mike
    Kurtz, Sarah
    IEEE JOURNAL OF PHOTOVOLTAICS, 2012, 2 (04): : 411 - 416
  • [28] Partially shaded III-V concentrator solar cell performance
    Bunthof, L. A. A.
    Veelenturf, S.
    Haverkamp, E. J.
    Corbeek, W. H. M.
    van der Woude, D.
    Bauhuis, G. J.
    Mulder, P.
    Vlieg, E.
    Schermer, J. J.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2018, 179 : 231 - 240
  • [29] Integration of III-V lasers on Si for Si photonics
    Tang, Mingchu
    Park, Jae-Seong
    Wang, Zhechao
    Chen, Siming
    Jurczak, Pamela
    Seeds, Alwyn
    Liu, Huiyun
    PROGRESS IN QUANTUM ELECTRONICS, 2019, 66 : 1 - 18
  • [30] Design and Evaluation of a III-V/Si Partial CPV Module for Maximization of Power Generation per Unit Module Area
    Sato, Daisuke
    Lee, Kan-Hua
    Araki, Kenji
    Yamaguchi, Masafumi
    Yamada, Noboru
    IEEE JOURNAL OF PHOTOVOLTAICS, 2019, 9 (01): : 147 - 153
12345