Volmer-Weber growth mode of InN quantum dots on GaN by MOVPE

被引：16

作者：

Meissner, Christian ^{[1
,2
]}

Ploch, Simon ^{[2
]}

Pristovsek, Markus ^{[2
]}

Kneissl, Michael ^{[2
]}

机构：

[1] ISAS Inst Analyt Sci, Albert Einstein Str 9, D-12489 Berlin, Germany

[2] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷

关键词：

MOLECULAR-BEAM EPITAXY; VAPOR-PHASE EPITAXY;

D O I：

10.1002/pssc.200880872

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The growth of indium nitride quantum dots on c-plane GaN/sapphire was investigated by metal-organic vapour phase epitaxy using in situ spectroscopic ellipsometry and ex situ atomic force microscopy. Using an ammonia stabilisation for temperatures above 500 degrees C desorption of InN structures could be prevented during cool down. At a growth temperature of 520 degrees C and a trimethylindium partial pressure of 0.5 Pa (V/III ratio of 5000) we observe growth without a wetting layer in the Volmer-Weber mode, indicated by the presence of InN quantum dots for sub-monolayer coverages and a constant ratio of quantum dot volume to total InN amount. At this transport limited growth regime the typical quantum dot density of 7.10(10) cm(-2) is independent from coverage. Coalescence occurs after 20 s growth time at an average structure diameter of 51 nm as expected for such a density. Smallest uncapped hexagonal structures are realised with an average diameter of 28 nm and a height of 3.1 nm. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：S545 / S548

页数：4

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