Influence of charged impurities on the surface phases of Sn/Ge(111)

被引：11
|
作者：
Rad, MG
Göthelid, M
Le Lay, G
Karlsson, UO
Grehk, TM
Sandell, A
机构：
[1] Royal Inst Technol, KTH, S-10044 Stockholm, Sweden
[2] CNRS, CRMC2, F-13288 Marseille 09, France
[3] Lund Univ, Inst Phys, Dept Synchrotron Radiat Res, S-22362 Lund, Sweden
来源：
SURFACE SCIENCE | 2001年 / 477卷 / 2-3期
关键词：
synchrotron radiation photoelectron spectroscopy; germanium; tin; iodine; alkali metals; low index single crystal surfaces; adatoms;
D O I：
10.1016/S0039-6028(01)00822-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The root3 alpha and 3 x 3 reconstructions on the Ge(111)-Sn surface have been perturbed by small amounts of iodine and potassium to test the spectral response in the course of a synchrotron radiation photoemission study. We demonstrate the inadequacy of the static model of the root3 alpha phase at room temperature and of the surface charge density wave model of the 3 x 3 phase at low temperature. Instead, the influence of the charged impurities is consistently explained when considering that dynamical fluctuations in the tin adatom positions are frozen in upon passing the phase transition temperature. (C) 2001 Published by Elsevier Science B.V.
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页码：227 / 234
页数：8
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