Effect of illumination on transport properties of the high mobility 2D hole gas in Si-SiGe heterostructures

被引：2
|
作者：
Stadnik, VA [1 ]
Mitchell, EE
Clark, RG
Fang, FF
Wang, PJ
Meyerson, BS
机构：
[1] Univ New S Wales, Natl Pulsed Magnet Lab, Sydney, NSW 2052, Australia
[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
来源：
PHYSICA B | 1998年 / 246卷
关键词：
Si-SiGe; 2D hole gas; transport; photoconductivity;
D O I：
10.1016/S0921-4526(97)00941-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effect of illumination on transport properties of the two-dimensional hole gas (2DHG) in Si-SiGe heterostructures is found to irreversibly alter its 2D transport properties, analogous to the persistent photoconductivity effect in GaAs-based devices. The relatively small change of the 2D hole concentration from 3.75 x 10(11) cm(-2) before illumination to 4.23 x 10(11) cm(-2) after illumination is accompanied by a significant increase in the in-plane effective mass from (0.23-0.25)m(e) to (0.32-0.33)m(e), and an even larger increase in the quantum lifetime. To evaluate the g-factor of this highly spin degenerate 2DHG we use highly sensitive magneto photoconductivity measurements to obtain g* = 9.1 +/- 0.1 after illumination, compared to an estimate for dark state g* = 8.5 +/- 0.5. (C) 1998 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码：386 / 390
页数：5
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